vault backup: 2025-02-05 14:38:06
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{"path":"Attachments/PCB Design.md/Exported image 20231126172008-3.png","text":"Bidirectional vs. Unidirectional ESD ESD Essentials . - . Configuration Bidirectional Unidirectional z /o Lot - 1/0 i LD EIRET(ET) ) = GND =l Has a symmetric positive and negative Has a positive breakdown voltage but breakdown voltage breaks down almost immediately in the negative direction * Can be used for interfaces with both * Can only be used for interfaces that only positive and/or negative voltage ranges have a positive voltage range Supported Interfaces (all interfaces) + Digital inputs, USB, HDMI and other positive signal interfaces In 1-channel ESD bidirectional ESD, any pin Has better negative clamping performance Benefits can be the 1/0 and any pin can be the than bidirectional diodes since the negative ground breakdown voltage is lower.","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/ESD.md/Exported image 20231126172008-12.png","text":"Step 4: Determine TLP Clamping Voltage ESD Essentials i - | e Fails: 20V TLP = D- + - D+ Clamping L0 \\VE S (7. N S (A (7. oo 5 Failst 16V TLP [ Ec 61000-4-2 USB == - - Rating Receptacle TLP failure voltage is NOT the same as absolute maximum voltage. Absolute maximum voltage is a DC voltage while TLP is a 100ns transient. 8","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/JTAG.md/Exported image 20231126172008-10.png","text":"Capacitance Recommendations E:J:Z:::‘ Tl Recommended Capacitance (C.) DEVICE leplo | <3opF | tepiciosos | T T S luse2o | <2spF | tepieosuos | luse30 | <ospF | tepacosuos | T R [Ethernet | <spF | eoariuoe | |Antenna | <02pF | eoicoinoc | [420mAloop | <gopF | o0 |","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/Operating Software List.md/Exported image 20231126172008-7.png","text":"Clamping Voltage on the TLP Plot B - Transmission Line Pulse Plot K .“ 20 + { { { 1 J { L 1 .. l,4 22A 18 + I} I} 1§ L ‘ -+ i o= _‘_ e \\ J \\ T R e e — === f6Acomesponds i PR e e e ‘ 1 B S RV ESD %12 T 1 T + + py e e Diode R £, ‘ L/ ‘ 8 L[ [ [1] .wl A 4 {5 M S S — |- g . I 7 4 : || . Minimize Rpyy to provide 2| | | l.l A N ) I _% better clamping voltage 0 ‘ 1 e Ty and protection 0 1 2 3 4 5 6 7 Volshgeg(V) B O B A < T T O [N ,","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/PCB Design.md/Exported image 20231126172013-14.png","text":"S Ve+v) ;u:l‘m:l‘z*’M:(T*X(i’","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/TODO WebApp.md/Exported image 20231126172013-11.png","text":"","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/GNSS.md/Exported image 20231126172008-7.png","text":"Clamping Voltage on the TLP Plot B - Transmission Line Pulse Plot K .“ 20 + { { { 1 J { L 1 .. l,4 22A 18 + I} I} 1§ L ‘ -+ i o= _‘_ e \\ J \\ T R e e — === f6Acomesponds i PR e e e ‘ 1 B S RV ESD %12 T 1 T + + py e e Diode R £, ‘ L/ ‘ 8 L[ [ [1] .wl A 4 {5 M S S — |- g . I 7 4 : || . Minimize Rpyy to provide 2| | | l.l A N ) I _% better clamping voltage 0 ‘ 1 e Ty and protection 0 1 2 3 4 5 6 7 Volshgeg(V) B O B A < T T O [N ,","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/Books.md/Exported image 20231126172008-3.png","text":"Bidirectional vs. Unidirectional ESD ESD Essentials . - . Configuration Bidirectional Unidirectional z /o Lot - 1/0 i LD EIRET(ET) ) = GND =l Has a symmetric positive and negative Has a positive breakdown voltage but breakdown voltage breaks down almost immediately in the negative direction * Can be used for interfaces with both * Can only be used for interfaces that only positive and/or negative voltage ranges have a positive voltage range Supported Interfaces (all interfaces) + Digital inputs, USB, HDMI and other positive signal interfaces In 1-channel ESD bidirectional ESD, any pin Has better negative clamping performance Benefits can be the 1/0 and any pin can be the than bidirectional diodes since the negative ground breakdown voltage is lower.","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/ROS2 and Safety Critical Applications.md/Exported image 20231126172028-0.png","text":"","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/Resources.md/Exported image 20231126172013-4.png","text":"2 F= / C,%JA surfuce","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/TODO WebApp.md/Exported image 20231126172013-4.png","text":"","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/Testing 25.10.21.md/Exported image 20231126172008-4.png","text":"ESD Standard: IEC 61000-4-2 ESD Essentials IEC 61000-4-2 ESD ‘ IEC 61000-4-2 o 3 3 *Designed for real world ‘ applications 20 40 60 ) 100 Time (ns) 5","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/Kanban Board.md/Exported image 20231126172013-7.png","text":"","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/SPS42 - Mitgebracht.md/Exported image 20231126171610-1.jpeg","text":"i : o 1 g - . , 4 an. b‘!_ ‘ -4 ::_k | - . “ * . ool g g DIE & , , L Iy 5 z & z ’ * ¥ A S 74 Wt z 3 3 “A f= | 4 “ s — 2 3 - D o a ¥ = A | B P s T T « ‘ i =0 BIENC . R : o /iy ~ =z AN ¥ AR TE: 4 - é oy »‘hz & »r % . , R - ) v — O k| 1 n 1 \\ i N s — | ‘ ‘ v i 1 ‘ i 4 \" 3 ” Har T E - 4 ' i ! \\ Je¢ % i \\ ® \" ; ) dry | ‘ | i | ’ | Ll \" | 3 b ‘ j T Ly P ‘ 3 ~ v - me BT e ‘ B","libVersion":"0.3.1","langs":"eng"}
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{"path":"Attachments/Webapp Requirements.md/Exported image 20231126172008-12.png","text":"","libVersion":"0.3.1","langs":"eng"}
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||||
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|
||||
{"path":"Attachments/PCB Design.md/Exported image 20231126172008-4.png","text":"ESD Standard: IEC 61000-4-2 ESD Essentials IEC 61000-4-2 ESD ‘ IEC 61000-4-2 o 3 3 *Designed for real world ‘ applications 20 40 60 ) 100 Time (ns) 5","libVersion":"0.3.1","langs":"eng"}
|
||||
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|
||||
{"path":"99 Work/0 OneSec/OneSecNotes/Multimedia/Pasted image 20231005135626.png","text":"- — int main(int argc, char **argv) { ?_;: rclepp::init(arge, argv); ;—‘; auto nh = std::make_shared<rclcpp::Node>(\"sleep_client™); = // We use the BehaviorTreeFactory to register our custom nodes % BT g I FTad g Fla g ——-’;&'- //Node registration process — factory.regi stc].:*uodeTypea'loveRobot>( \"MoveRobot\"); e— factory.registerNodeType<ReadinglLaser>(“ReadinglLaser™); % factory.registerNodeType<Rotating>(\"Rotating”); = —.‘: // we incorporated the BT (XML format) = auto tree = factory.createTreeFromText(xml_text); -?s K — NodeStatus status = NodeStatus::FAILURE; é BT: :NodeConfiguration con = {}; = = //definiion of smart pointers to =% auto 1c_listener = std::make_shared<ReadinglLaser>(\"lc_listener”, con); ’.»5* auto 1c_odom = std::make_shared<Rotating>(\"1lc_odom”, con); (== // for logging purposes. Details later s FileLogger logger file(tree, \"bt trace unite.fbl\"); :_';f // we spin ROS nodes = while (status == BT::NodeStatus::FAILURE) { =5 rclcpp::spin_some(lc_odom) ;","libVersion":"0.3.1","langs":"eng"}
|
||||
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|
||||
{"path":"Attachments/Planning.md/Exported image 20231126171856-0.png","text":"Name Size Possible Interrupts (T WV (e [T1]4 1o} TIMERO 8 bits e Compare Match e delay(), millis(), micros() - (0-255) e Overflow e analogWrite() pins 5, 6 TIMER1 16 bits o Compare Match ‘o Servo functions ' (0-65,535) e Overflow e analogWrite() pins 9, 10 | e Input Capture TIMER2 | 8 bits o Compare Match ;o tone() (0-255) e Overflow e analogWrite() pins 3, 11","libVersion":"0.3.1","langs":"eng"}
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||||
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|
||||
{"path":"Attachments/Virtual Swashplate.md/Exported image 20231126172008-2.png","text":"Working Voltage vs. Breakdown Voltage ESi? E?'Sefitial W A ESD |-V Plot . . . 1 | | A8 —— EEEmmE ! O 7 | s AR [} 1 2 3 o4 5 6 7 [ VRWM VBR Voltage (V)","libVersion":"0.3.1","langs":"eng"}
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||||
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|
||||
{"path":"Attachments/Electrical Engineering.md/eth-984-02 (1).pdf","text":"","libVersion":"0.3.1","langs":""}
|
||||
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|
||||
{"path":"Attachments/Kanban Board.md/Exported image 20231126172013-8.png","text":"_(etv) Eir o","libVersion":"0.3.1","langs":"eng"}
|
||||
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|
||||
{"path":"Attachments/GNSS.md/Exported image 20231126172013-14.png","text":"","libVersion":"0.3.1","langs":"eng"}
|
||||
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|
||||
{"path":"Attachments/PCB Design.md/Exported image 20231126172013-12.png","text":"i Cr=sa [@ - i]","libVersion":"0.3.1","langs":"eng"}
|
||||
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|
||||
{"path":"Attachments/Tutorial Webapp.md/Exported image 20231126172008-7.png","text":"Clamping Voltage on the TLP Plot B - Transmission Line Pulse Plot K .“ 20 + { { { 1 J { L 1 .. l,4 22A 18 + I} I} 1§ L ‘ -+ i o= _‘_ e \\ J \\ T R e e — === f6Acomesponds i PR e e e ‘ 1 B S RV ESD %12 T 1 T + + py e e Diode R £, ‘ L/ ‘ 8 L[ [ [1] .wl A 4 {5 M S S — |- g . I 7 4 : || . Minimize Rpyy to provide 2| | | l.l A N ) I _% better clamping voltage 0 ‘ 1 e Ty and protection 0 1 2 3 4 5 6 7 Volshgeg(V) B O B A < T T O [N ,","libVersion":"0.3.1","langs":"eng"}
|
||||
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Reference in New Issue
Block a user